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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC867 DESCRIPTION With TO-66 package High collector-base breakdown voltage :VCBO=400V(min) APPLICATIONS For high voltage and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER ANG CH Collector-base voltage IN Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 400 150 5 1 2 UNIT V V V A A W ae ae TC=25ae 23 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC867 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=400V;IE=0 100 |I A IEBO Emitter cut-off current VEB=5V; IC=0 100 |I A hFE fT DC current gain Transition frequency IC=0.1A ; VCE=3V IC=0.2A ; VCE=10V HAN INC SEM GE OND IC TOR UC 50 8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC867 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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